ML7XX16 series type name ml725b16f/ml720j16s/ml725j16f mitsubishi laser diodes 2.5gb p s ingaasp dfb laser diode description ML7XX16 series are uncooled dfb (distributed feedback) laser diodes for 2.5gbps transmission emitting light beam at 1310nm. /4 shifted grating structure is employed to obtain excellent smsr p erformance under 2.5gbps modulation. furthermore, ML7XX16 can operate in the wide temperature range form -20oc to 85oc without any temperature control. features 2.5gbps transmission application absolute maximum ratings /4 phase shifted grating structure high side-mode-suppression-ratio (typical 45db) wide temperature range operation (-20oc to 85oc ) high resonance frequency (typical 11ghz) electrical/optical characteristics (tc=25oc) threshold current operation current operating voltage peak wavelength beam divergence angle (parallel) (perpendicular) side mode suppression ratio monitoring current (pd) rise and fall time(10%-90%) s y mbol parameter conditions min. typ. max. unit ith cw -1015ma io p cw,po=5mw - 30 40 ma v vo p cw,po=5mw 1.1 1.8 p cw,po=5mw,tc=-20oc ~ +85oc 1310 nm // cw,po=5mw - 25 47 deg. ? cw,po=5mw,vrd=1v - 11 - 20 - smsr fr 2.48832gbps, ibias=ith,ipp=40ma 40 - 30 deg. 35 45 pf resonance frequency tr,t f 2.0 ma db 150 ghz 1290 1330 - limits ma cw,tc=85oc cw,po=5mw,tc=85oc ? - 35 50 - 75 100 ma mw/ma 0.25 0.18 - cw,po=5mw 100 - psec 0.1 - 0.1 a cw,po=5mw,tc=-20oc ~ +85oc - - 10 - slope efficiency dark current (pd) symbol parameter conditions ratings unit if laser forward current 200 ma vrl laser reverse voltage - 2 v tc operation temperature - -20 ~+85 tstg storage temperature - -40 ~+100 oc oc vrd - 20 v po output powe r cw 6 mw pd reverse voltage ird pd forward current - 2 ma - mitsubishi electric j an. 2002
(1) 1.0min. 2.0min. 3.550.1 5.6 +0 -0.03 1.27 0.250.03 (glass) 18 1 2.10.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (dimension:mm) 0.03 ml725b16f ld pd (3) (2) (1) (4) case outline drawings ml725b16f ML7XX16 series mitsubishi laser diodes 2.5gb p s ingaasp dfb laser diode (1) 1.0min. 2.0min. 3.550.1 5.6 +0 -0.03 1.27 0.250.03 (glass) 18 1 2.10.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (dimension:mm) 0.03 ml720j11s ld pd (3) (4) (1) (2) case ml720j16s (1) 3.750.1 5.6 +0 -0.03 1.27 18 1 3.97 0.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.3 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) top view (7.51) (dimension:mm) 0.03 ml725j16f ld pd (3) (2) (1) (4) case ml725j16f
0 2 4 6 8 10 0 20 40 60 80 100 forward current if (ma) light output po (mw) -20c 25c 50c 85c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -60 -40 -20 0 20 40 60 angle () relative light output q^ q// po=5mw tc=25c ML7XX16 series mitsubishi laser diodes 2.5gbps ingaasp dfb laser diode typical characteristics -90 -80 -70 -60 -50 -40 -30 1290 1300 1310 1320 1330 forward current if (ma) light output po (mw) -20c 25c 50c 85c po=5mw fig. 1 light output v.s. forward current fig. 2 spectrum fig. 3 far field pattern
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